Silicon And Silicon-germanium Nanowires

Description
These studies seek to study the formation of silicon and silicon-germanium nanowires and to develop integrate nanowire devices such as transistors, light-emitting diodes (LEDs) and lasers. Vertically oriented nanowires can be grown at particular substrate locations by lithographically placing catalysts, and the nanowires made into devices with microfabrication.

Implications
Potential applications of integrated nanowire devices in an advanced CMOS setting include high-density vertical transistors and electrical interconnections. Possible new applications enabled by a nanowire device technology include silicon-based light emitters, quantum dot spintronic devices, and high-sensitivity biomolecular detectors.

Research Group Contacts
Prof. Mark S. Miller, Electrical & Computer Engineering and Materials Science & Engineering Depts.

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